External-cavity semiconductor laser tunable from 1.3 to 1.54 μm for optical communication

IEEE Photonics Technology Letters

Volumn 14, Issue 1, 2002, Pages 3-5

  Lin, Ching Fuh ^a,b   Su, Yi Shin ^b   Wu, Bing Ruey ^c  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c CHUNGHWA TELECOM CO LTD   (Taiwan)

Author keywords

Broad band tunability; Nonidentical multiple quantum wells; Nonuniform carrier distribution; Semiconductor optical amplifier

Indexed keywords

BROAD GAIN SPECTRUM; EXTERNAL-CAVITY CONFIGURATION; INDIUM GALLIUM ARSENIC PHOSPHIDE; LINEAR EXTERNAL CAVITY; NONUNIFORM CARRIER DISTRIBUTION; SEMICONDUCTOR OPTICAL AMPLIFIER; SEPARATE COFINEMENT HETEROSTRUCTURE; SIDEMODE SUPPRESSION RATIO;

AMPLIFICATION; CARRIER CONCENTRATION; HETEROJUNCTIONS; LASER BEAMS; LASER MODES; LASER TUNING; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SPECTRUM ANALYSIS;

QUANTUM WELL LASERS;

EID: 0036178193     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.974142     Document Type: Article

References (9)

1. Wide spectrum single quantum well superluminescent diodes at 0.8 μm with bent optical waveguide
2. Quantum well superluminescent diode with very wide emission spectrum
3. Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells
4. 1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability
5. Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells
6. Extremely broadband AlGaAs/GaAs superluminescent diodes
7. Broad spectral bandwidth semiconductor lasers
8. Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers/superluminescent diodes