Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

Ultramicroscopy

Volumn 107, Issue 9, 2007, Pages 819-824

  Tsang, W M ^a   Stolojan, V ^a   Sealy, B J ^a   Wong, S P ^b   Silva, S R P ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Cobalt; Field emission; Ion implantation; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; FIELD EMISSION; ION IMPLANTATION; NANOCLUSTERS; SEMICONDUCTOR QUANTUM DOTS; SILICA; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON FIELD EMISSIONS; IMPLANTATION ENERGY; IMPLANTED LAYERS;

COBALT;

COBALT; ION; QUANTUM DOT; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRIC FIELD; ELECTRON; ELECTRON MICROSCOPY; FIELD EMISSION;

EID: 34249056510     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2007.02.013     Document Type: Article

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