Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2155-2159

  Lok, S K ^a   Li, B K ^a   Wang, J N ^a   Wong, G K L ^a   Sou, I K ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A3. Molecular beam epitaxy; B1. Nanomaterials; B2. Magnetic materials; B2. Semiconducting II VI materials; B3. Heterojunction semiconductor devices

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; MAGNETIC DEVICES; MAGNETIC MATERIALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SWITCHES;

A3. MOLECULAR BEAM EPITAXY; B1. NANOMATERIALS; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING II-VI MATERIALS; B3. HETEROJUNCTION SEMICONDUCTOR DEVICES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 63349095329     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.015     Document Type: Article

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