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Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory

(5) Kannan, V a Chae, Y S a Ramana, Ch V V a Ko, Dong Sik a Rhee, J K a

a Dongguk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOT STRUCTURE; MEMORY DEVICE; METAL OXIDES; NON-VOLATILE; ON/OFF RATIO; QUANTUM DOT; SOLUTION-PROCESSED; SWITCHING CHARACTERISTICS; SWITCHING MECHANISM; SWITCHING TIME; TWO-TERMINAL DEVICES;

METALLIC COMPOUNDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955743397 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3573601 Document Type: Article

Times cited : (21)

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