Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

Optics Express

Volumn 19, Issue 22, 2011, Pages 21818-21831

  Chow, Weng W ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GALLIUM COMPOUNDS; LIGHT EMISSION; LIGHT EMITTING DIODES; SPECTROSCOPY; ZINC SULFIDE;

BANDSTRUCTURE PROPERTIES; DYNAMICAL MODEL; HOLE STATE; INTERNAL QUANTUM EFFICIENCY; MODELING DEVICES; QUANTUM CONFINED STARK EFFECT; WURTZITES;

QUANTUM EFFICIENCY;

EID: 80054913516     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.021818     Document Type: Article

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