Monolithic 3-D integration of SRAM and image sensor using two layers of single-grain silicon

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3954-3961

  Derakhshandeh, Jaber ^a   Golshani, Negin ^a   Ishihara, Ryoichi ^a   Tajari Mofrad, Mohammad Reza ^a   Robertson, Michael ^b   Morrison, Thomas ^b   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b ACADIA UNIVERSITY   (Canada)

Author keywords

3 D integrated circuits (3 DICs); 6T SRAM cells; Excimer laser crystallization; image sensors; monolithic integration

Indexed keywords

3-D INTEGRATED CIRCUIT; 3-D INTEGRATION; 6T SRAM CELLS; 6T-SRAM; EXCIMER LASER CRYSTALLIZATION; MONOLITHIC INTEGRATION; PHOTODIODE ARRAYS; PIXEL SIZE; READ-OUT CIRCUIT; SENSOR APPLICATIONS; SILICON LAYER; STACKED TRANSISTORS; STATIC RANDOM ACCESS MEMORY; TWO LAYERS;

EXCIMER LASERS; IMAGE SENSORS; INTEGRATION; MONOLITHIC INTEGRATED CIRCUITS; PIXELS; SENSORS; THREE DIMENSIONAL;

STATIC RANDOM ACCESS STORAGE;

EID: 80054900633     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2163720     Document Type: Article

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