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Volumn 49, Issue 3 PART 2, 2010, Pages

High speed six-transistor static random access memory cells using single grain thin film transistors fabricated at low temperature process

Author keywords

[No Author keywords available]

Indexed keywords

6T-SRAM; ANALYTICAL CALCULATION; CZOCHRALSKI PROCESS; EXCIMER LASER CRYSTALLIZATION; GATE LENGTH; GRAIN FILTERS; LOW-TEMPERATURE PROCESS; POWER SUPPLY; SINGLE GRAINS; SINGLE-GRAIN THIN-FILM TRANSISTOR; SRAM CELL; STATIC NOISE MARGIN; STATIC RANDOM ACCESS MEMORY; TRANSIENT SIMULATION;

EID: 77952564113     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.03CA09     Document Type: Article
Times cited : (1)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.