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Volumn 49, Issue 3 PART 2, 2010, Pages
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High speed six-transistor static random access memory cells using single grain thin film transistors fabricated at low temperature process
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Author keywords
[No Author keywords available]
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Indexed keywords
6T-SRAM;
ANALYTICAL CALCULATION;
CZOCHRALSKI PROCESS;
EXCIMER LASER CRYSTALLIZATION;
GATE LENGTH;
GRAIN FILTERS;
LOW-TEMPERATURE PROCESS;
POWER SUPPLY;
SINGLE GRAINS;
SINGLE-GRAIN THIN-FILM TRANSISTOR;
SRAM CELL;
STATIC NOISE MARGIN;
STATIC RANDOM ACCESS MEMORY;
TRANSIENT SIMULATION;
EXCIMER LASERS;
FABRICATION;
GAS LASERS;
HEAT RADIATION;
THIN FILM TRANSISTORS;
THIN FILMS;
STATIC RANDOM ACCESS STORAGE;
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EID: 77952564113
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.03CA09 Document Type: Article |
Times cited : (1)
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References (11)
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