Analog and digital output lateral photodiodes fabricated by μ-Czochralski process at low temperature

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 93-94

  Derakhshandeh, Jaber ^a   Mofrad, M R Tajari ^a   Ishihara, R ^a   Beenakker, C I M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI PROCESS; DIGITAL OUTPUT; GRAIN FILTERS; HIGH FREQUENCY; HIGH MOBILITY; LASER ENERGIES; LOW TEMPERATURES; PMOS TRANSISTORS; SEM IMAGE; SILICON LAYER; SINGLE GRAINS; SOI DEVICES;

CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DISTRIBUTED PARAMETER CONTROL SYSTEMS; EXCIMER LASERS; FABRICATION; GAS LASERS; PHOTODIODES;

AMORPHOUS SILICON;

EID: 76549124748     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354856     Document Type: Conference Paper

References (3)

1. R.Vikas, et al, " High Performance Single Grain Si TFTs Inside a Location-Controlled Grain by μ-Czochralski Process with Capping Layer", IEDM2005.
2. R. Dyck and G. Weckler, " Integrated arrays of silicon photodetectors for image sensors", IEEE Trans. on Electron Devices, ED-15, 1968.
3. S.Radovanovic, A.J.Annema and B.Nauta, "High-speed lateral polysilicon photodiode in standard CMOS", IN pROC. ESSDERC 2003, Estoril, Portugal, pp.521-524.