A comparative study of the growth, microstructural and electrical properties of multiwall CNTs grown by thermal and microwave plasma enhanced CVD methods

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 44, Issue 1, 2011, Pages 29-36

  Mathur, A ^a   Wadhwa, S ^a   Tweedie, M ^a   Hazra, K S ^b   Dickinson, C ^c   Roy, S S ^a,d   Mitra, S K ^d   Misra, D S ^b   McLaughlin, J A ^a  

^a UNIVERSITY OF ULSTER   (United Kingdom)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^c UNIVERSITY OF LIMERICK   (Ireland)

^d UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BASE-GROWTH MECHANISM; CHEMICAL VAPOUR DEPOSITION; COMPARATIVE STUDIES; CRYSTALLINITIES; ELECTRICAL RESISTANCES; GROWTH MECHANISMS; GROWTH METHOD; GROWTH TECHNIQUES; MICRO-STRUCTURAL; MICROWAVE PLASMA CVD; MICROWAVE PLASMA-ENHANCED CVD; RAMAN STUDIES; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SILICON SUBSTRATES; STATIC WATER; THERMAL CVD; TURN-ON FIELD; XRD;

CONTACT ANGLE; CRYSTALLITE SIZE; ELECTRIC PROPERTIES; MICROWAVES; MULTIWALLED CARBON NANOTUBES (MWCN); PHOTOELECTRON SPECTROSCOPY; PLASMA DEPOSITION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL VAPOR DEPOSITION;

EID: 80054694890     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.06.035     Document Type: Article

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