Scaling of laser produced plasma UTA emission down to 3 nm for next generation lithography and short wavelength imaging

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8139, Issue , 2011, Pages

  Li, Bowen ^a   Endo, Akira ^b   Otsuka, Takamitsu ^c   O'Gorman, Colm ^a   Cummins, Thomas ^a   Donnelly, Tony ^a   Kilbane, Deirdre ^a   Jiang, Weihua ^d   Higashiguchi, Takeshi ^c,e   Yugami, Noboru ^c,e   Dunne, Padraig ^a   O'Sullivan, Gerry ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

^b WASEDA UNIVERSITY   (Japan)

^c UTSUNOMIYA UNIVERSITY   (Japan)

^d NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Extreme ultraviolet; LPP; Rare earth; Unresolved transition array (UTA); Water window

Indexed keywords

13.5 NM; AVERAGE POWER; EXTREME ULTRAVIOLET; HIGH AVERAGE POWER; HIGH CONVERSION EFFICIENCY; HIGH-VOLUME PRODUCTION; HIGHLY-IONIZED; INJECTED FUEL; LOW-DENSITY TARGET; LPP; NEXT GENERATION LITHOGRAPHY; PLASMA TEMPERATURE; POWER LEVELS; SATELLITE EMISSION; SHORT PULSE; SHORT WAVELENGTHS; SHORTER WAVELENGTH; UNRESOLVED TRANSITION ARRAY; WATER WINDOW;

CARBON DIOXIDE; CONVERSION EFFICIENCY; GADOLINIUM; IONIZATION; IRRADIATION; LASER PRODUCED PLASMAS; MAGNETIC FIELDS; OPTICS; OPTIMIZATION; TIN; ULTRAVIOLET LASERS;

SEMICONDUCTOR LASERS;

EID: 80054087676     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.892513     Document Type: Conference Paper

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