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Volumn , Issue , 2010, Pages 1490-1493

Reliability of AlN/sapphire bilayer structure for high-temperature SAWapplications

Author keywords

AlN; high temperature; sapphire; SAW

Indexed keywords

AIR ATMOSPHERE; ALN; BI-LAYER; BI-LAYER STRUCTURE; HIGH TEMPERATURE; IN-SITU MEASUREMENT; SAPPHIRE SUBSTRATES; SAW DEVICE; SECONDARY ION MASS SPECTROSCOPY; SURFACE ACOUSTIC WAVE DEVICE; XRD; EXPERIMENTAL STUDIES;

EID: 80054081700     PISSN: 10510117     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULTSYM.2010.5935568     Document Type: Conference Paper
Times cited : (12)

References (11)
  • 8
    • 36249004509 scopus 로고    scopus 로고
    • Oxidation behavior of AlN films at high temperature under controlledatmosphere
    • C.-Y. Lin and F.-H. Lu, "Oxidation behavior of AlN films at hightemperature under controlled atmosphere," J. Eur. Ceram. Soc., Vol. 28,2008, pp. 691-698
    • (2008) J. Eur. Ceram. Soc. , vol.28 , pp. 691-698
    • Lin, C.-Y.1    Lu, F.-H.2
  • 10
    • 38549134356 scopus 로고    scopus 로고
    • Theoretical and experimental investigation of gigahertzband,temperature- compensated electromechanical coupling configurations based on AlNfilms
    • C. Caliendo, "Theoretical and experimental investigation ofgigahertzband, temperature-compensated electromechanical coupling configurationsbased on AlN films," Appl. Phys. Lett., Vol. 92, 2008, 033505.
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 033505
    • Caliendo, C.1
  • 11
    • 77953011890 scopus 로고    scopus 로고
    • Surface acoustic wave devices based on AlN/Sapphire structure for hightemperature applications
    • Thierry Aubert, Omar Elmazria, Badreddine Assouar, Laurent Bouvot and M.Oudich, "Surface acoustic wave devices based on AlN/Sapphire structure forhigh temperature applications," Appl. Phys. Lett., Vol. 96, 2010, 203503.
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 203503
    • Aubert, T.1    Elmazria, O.2    Assouar, B.3    Bouvot, L.4    Oudich, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.