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Volumn 99, Issue 14, 2011, Pages

In-situ observation of 〈110〉 oriented Ge nanowire growth and associated collector droplet behavior

Author keywords

[No Author keywords available]

Indexed keywords

DROPLET BEHAVIORS; EVAPORATION RATE; GE(100); GERMANIUM NANOWIRES; IN-SITU; IN-SITU OBSERVATIONS; NANOWIRE GROWTH; VAPOR-LIQUID-SOLID PROCESS; WIRE DIAMETER;

EID: 80053958012     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3647774     Document Type: Article
Times cited : (15)

References (20)
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    • Control of Si nanowire growth by oxygen
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    • Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.