Elementary processes in nanowire growth

Nano Letters

Volumn 11, Issue 2, 2011, Pages 316-320

  Schwarz, K W ^a   Tersoff, J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

epitaxy; growth; liquid; Nanowire; semiconductor; simulation

Indexed keywords

ELEMENTARY PROCESS; EPITAXY; EXPERIMENTAL OBSERVATION; EXPLICIT MODELS; EXTERNAL PERTURBATIONS; FACET GROWTH; GROWTH; GROWTH CONDITIONS; LATERAL GROWTH; NANOWIRE GROWTH; NUMERICAL SIMULATION; SEMICONDUCTOR; SIMULATION; VAPOR-LIQUID-SOLID GROWTH;

COMPUTER SIMULATION; DROP FORMATION; EPITAXIAL GROWTH; LIQUIDS; NANOWIRES; WIRE;

SEMICONDUCTOR GROWTH;

NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 79851474458     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1027815     Document Type: Article

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