Self-assembled and ordered growth of silicon and germanium nanowires

Superlattices and Microstructures

Volumn 46, Issue 1-2, 2009, Pages 277-285

  Kramer, Andrea ^a   Albrecht, Martin ^a   Boeck, Torsten ^a   Remmele, Thilo ^a   Schramm, Peter ^a   Fornari, Roberto ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Focused ion beams; Germanium; Nanowires; Orientation; Physical vapor deposition; Silicon; Substrate structuring

Indexed keywords

EPITAXIAL SILICON; GE SUBSTRATES; GERMANIUM NANOWIRES; GERMANIUM SUBSTRATES; GROWTH CHAMBER; GROWTH DIRECTIONS; NANO-DROPLETS; NUCLEATION ENERGY; ORDERED GROWTH; ORIENTATION; REGULAR ARRAY; SELF-ASSEMBLED; SEM; SI SUBSTRATES; SILICON NANOWIRES; TEM; VAPOR-LIQUID-SOLID MECHANISM;

ELECTRIC WIRE; FOCUSED ION BEAMS; GERMANIUM; GOLD DEPOSITS; IONS; NANOWIRES; ORE TREATMENT; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

SUBSTRATES;

EID: 67249150488     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.10.041     Document Type: Article

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