High potential of thin (< μm) a-Si: H/μc-Si:H tandem solar cells

Progress in Photovoltaics: Research and Applications

Volumn 18, Issue 2, 2010, Pages 83-89

  Schicho, S ^a   Hrunski, D ^a   Van Aubel, R ^a   Gordijn, A ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

A SI:H c Si:H; Cost effective; PECVD; Solar cells; Stability; Thin film silicon

Indexed keywords

A-SI:H; ABSORBER LAYERS; BOTTOM CELLS; CELL CURRENT; DEGRADATION RATE; DEVICE PROPERTIES; HIGH EFFICIENCY; HIGH POTENTIAL; INITIAL EFFICIENCY; OPEN CIRCUIT CONDITIONS; PHOTOVOLTAICS; QUANTUM EFFICIENCY MEASUREMENTS; REFLECTED LIGHT; SILICON-BASED; SINGLE-JUNCTION CELLS; STABILIZED EFFICIENCY; TANDEM CELLS; TANDEM SOLAR CELLS; THICKNESS VARIATION; THIN CELLS; THIN FILM SILICON;

CADMIUM SULFIDE SOLAR CELLS; CELLS; CHEMICAL VAPOR DEPOSITION; COST EFFECTIVENESS; DEGRADATION; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS;

CYTOLOGY;

EID: 77649220981     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.929     Document Type: Article

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