6 MeV electron irradiation effects on electrical properties of Al/TiO 2/n-Si MOS capacitors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 269, Issue 23, 2011, Pages 2740-2744

  Laha, P ^a   Dahiwale, S S ^b   Banerjee, I ^a   Pabi, S K ^c   Kimd, D ^d   Barhai, P K ^a   Bhoraskar, V N ^b   Mahapatra, S K ^a  

^a BIRLA INSTITUTE OF TECHNOLOGY   (India)

^b UNIVERSITY OF PUNE   (India)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

^d Korea University   (South Korea)

Author keywords

C V measurement; Electron irradiation; Leakage current; MOS device; TiO 2

Indexed keywords

C-V MEASUREMENT; CAPACITANCE VOLTAGE; DOSE RATE; ELECTRICAL PARAMETER; ELECTRICAL PROPERTY; ELECTRON DOSE; FLAT-BAND VOLTAGE; INTERFACE TRAP DENSITY; IRRADIATION EFFECT; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MEV-ELECTRONS; POOLE-FRENKEL; RADIO FREQUENCY MAGNETRON SPUTTERING; TIO;

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRON IRRADIATION; ELECTRONS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TITANIUM DIOXIDE; VANADIUM;

MOS CAPACITORS;

EID: 80053372439     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2011.08.024     Document Type: Article

References (24)

1. F.A.S. Soliman, A.S.S. Al-Kabbani, K.A.A. Sharshar, and M.S.I. Rageh Appl. Radiat. Isot. 46 5 1995 355 361
2. K.H. Zaininger, and A.G. Holmes-Siedle RCA Rev. 28 1967 208 240
3. P.F. Schmidt, M.J. Rand, J.P. Mitchell, and J.D. Ashner IEEE Trans. Nucl. Sci. Ns-16 1969 211 219
4. J.R. Cricchi, and D.F. Barbe Appl. Phys. Lett. 19 1971 49 51
5. M. Badila, Ph. Godignon, J. Millan, S. Berberich, and G. Brezeanu Microelectron Reliab 41 2001 1015 1018
6. H. García, S. Dueñas, H. Castán, A. Gómez, L. Bailón, R. Barquero, K. Kukli, M. Ritala, M. Leskelä, and J. Vac Sci. Technol. B 27 1 2009 416 420
7. P.S. Winokur, J.R. Schank, P.J. Mcwhorter, P.V. Dressendorfer, and D.C. Turpin IEEE. Trans. Nucl. Sci. Ns-31 1984 1453
8. Chengshi Liu, Dengxue Wu, Lili Zhao, Zhijun Liao, Nucl Instrum Meth Phys Res B 268 (2010) 1446-1449.
9. J.D. Zhang, S. Fung, Lin Li-Bin, and Liao Zhi-Jun Surf Coat Technol 158-159 2002 238 241
10. K.J. Hubbard, and D.G. Schlom J. Mater. Res. 11 1996 2757 2776
11. Pinaki Laha, A.B. Panda, S. Dahiwale, K. Date, K.R. Patil, P.K. Barhai, A.K. Das, I. Banerjee, S.K. Mahapatra, Thin Solid Films 519 (2010) 1530-1535.
12. C. Merckling, M. El-Kazzi, L. Becerra, L. Largeau, G. Patriarche, G. Saint-Girons, and G. Hollinger Microelectron. Eng. 84 2007 2243 2246
13. W.D. Callister, Jr., David G. Rethwisch, R. Balasubramanium, Mater. Sci. Eng. (Wiley India (P) Ltd.) (2009).
14. A. Tatarolu, M.H. Bölükdemir, G. Tanir, S. Altindal, and M.M. Bülbül Nucl Instrum Meth Phys Res B 254 2007 273 277
15. F. Belgin Ergin, Rait Turan, Sergiu T. Shishiyanu, Ercan Yilmaz, Nucl. Instrum. Meth. Phys. Res. B 268 (2010) 1482-1485.
16. P. Thangadurai, W.D. Kaplan, V. Mikhelashvili, and G. Eisenstein Microelectron. Reliab. 49 2009 716 720
17. A. Tatarolu,Ş. Altindal, M.H. Bölükdemir, and G. Tanir Nucl. Instrum. Meth. Phys. Res. B 264 2007 73 78
18. W.A. Hill, and C.C. Coleman Solid-State Electron. 23 9 1980 987
19. A. Tatarolu, M.H. Bölükdemir, G. Tanir,Ş. Altindal, and M.M. Bülbül Nucl. Instrum. Meth. Phys. Res. B 254 2007 273 277
20. P.S. Alegaonkar, V.N. Bhoraskar, P. Balaya, and P.S. Goyal Appl. Phys. Lett. 80 4 2002
21. J.C. Maxwell, Electricity and Magnetism, vol. 1, Oxford University Press, Oxford, 1929.
22. K.W. Wagner, Ann. Phys. 40 (1913) 817.
23. C.G. Koops, Phys. Rev. 83 (1951) 121.
24. V. Mikhelashvili, P. Thangadurai, W.D. Kaplan, and G. Eisenstein Microelectron. Eng. 87 2010 1728 1734