The electron irradiation effects on silicon gate dioxide used for power MOS devices

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 1015-1018

  Badila, M ^a   Godignon, Ph ^b   Millan, J ^b   Berberich, S ^c   Brezeanu, G ^d  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c AIRBUS DEFENCE AND SPACE   (Germany)

^d UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC BREAKDOWN; ELECTRON IRRADIATION; GATES (TRANSISTOR); INSULATED GATE BIPOLAR TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SILICA; STRESS ANALYSIS; THRESHOLD VOLTAGE;

SINGLE EVENT GATE RUPTURE;

MOSFET DEVICES;

EID: 0035393386     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00060-9     Document Type: Article

References (8)

1. Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
2. Space charge limited degradation of bipolar oxides at low electric fields
3. Proton-induced dielectric breakdown of power MOSFET
4. A comprehensive physically based predictive model for radiation damage in MOS systems
5. Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures