Electrical properties changes induced by electron radiation at TiO2/Si interface

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 9, 2010, Pages 1446-1449

  Liu, Chengshi ^a   Wu, Dengxue ^a   Zhao, Lili ^a   Liao, Zhijun ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Electron radiation; Flat band voltage; TiO2 Si structures

Indexed keywords

ANNEALED SAMPLES; CRYSTALLINE PHASE; ELECTRICAL PROPERTY; ELECTRON BEAM EVAPORATION; ELECTRON BEAM IRRADIATION; ELECTRON RADIATION; FLAT-BAND VOLTAGE; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; OXYGEN ANNEALING; RADIATION RESISTANT; TIO;

ANNEALING; CRYSTALLINE MATERIALS; ELECTRON BEAMS; ELECTRONS; MOS CAPACITORS; OXYGEN; PHASE INTERFACES; RADIATION; SILICON; TITANIUM DIOXIDE; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 77950866067     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.01.005     Document Type: Article

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