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Volumn , Issue , 2005, Pages 83-86

The Field Charge Extraction (FCE) diode a novel technology for soft recovery high voltage diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC FIELDS; EXTRACTION; VOLTAGE CONTROL;

EID: 27744556722     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (71)

References (8)
  • 1
    • 0035272707 scopus 로고    scopus 로고
    • Freewheeling diode reverse recovery failure modes in IGBT applications
    • March/April
    • M.T. Rahimo, N.Y.A. Shammas, "Freewheeling Diode Reverse Recovery Failure Modes in IGBT Applications" IEEE Transactions on Industrial Application, Vol. 37, No. 2, March/April 2001, pp 661 - 670.
    • (2001) IEEE Transactions on Industrial Application , vol.37 , Issue.2 , pp. 661-670
    • Rahimo, M.T.1    Shammas, N.Y.A.2
  • 2
    • 0036051387 scopus 로고    scopus 로고
    • Extending the boundary limits of high voltage IGBTs and diodes to above 8kV
    • Santa Fe, New Mexico, USA, June
    • M.T. Rahimo, A. Kopta, S. Eicher, N. Kaminski, F. Bauer, U. Schlapbach, S. Linder, "Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV", Proc. ISPSD'02, pp. 41-44, Santa Fe, New Mexico, USA, June 2002.
    • (2002) Proc. ISPSD'02 , pp. 41-44
    • Rahimo, M.T.1    Kopta, A.2    Eicher, S.3    Kaminski, N.4    Bauer, F.5    Schlapbach, U.6    Linder, S.7
  • 3
    • 0002032754 scopus 로고
    • High voltage (4kV) emitter short type diode (ESD)
    • Japan May
    • M. Kitagawa, K. Matsushita, A. Nakagawa, "High Voltage (4kV) Emitter Short Type Diode (ESD)", Proc. ISPSD'92, pp. 60-65, Japan May, 1992.
    • (1992) Proc. ISPSD'92 , pp. 60-65
    • Kitagawa, M.1    Matsushita, K.2    Nakagawa, A.3
  • 5
    • 0030674985 scopus 로고    scopus 로고
    • Improvement of the diode characteristics using emitter- Controlled principles (EMCON-diode)
    • Weimar, Germany, May
    • A. Porst, F. Auerbach, H. Brunner, G. Deboy, F. Hille, "Improvement of the Diode Characteristics Using Emitter- Controlled Principles (EMCON-Diode)", Proc ISPSD'97, pp. 213-216, Weimar, Germany, May 1997.
    • (1997) Proc ISPSD'97 , pp. 213-216
    • Porst, A.1    Auerbach, F.2    Brunner, H.3    Deboy, G.4    Hille, F.5
  • 6
    • 0031639099 scopus 로고    scopus 로고
    • 4.5kV soft recovery diode with carrier stored structure
    • Kyoto, Japan, June
    • K. Satoh, T. Nakagawa, K. Morishita, S. Koga, A. Kawakami, "4.5kV Soft Recovery Diode With Carrier Stored Structure", Proc. ISPSD'98, pp. 313 316, Kyoto, Japan, June 1998.
    • (1998) Proc. ISPSD'98 , pp. 313316
    • Satoh, K.1    Nakagawa, T.2    Morishita, K.3    Koga, S.4    Kawakami, A.5
  • 7
    • 0037381389 scopus 로고    scopus 로고
    • Dynamic avalanche and reliability of high voltage diodes
    • J. Lutz, M. Domeij, "Dynamic Avalanche and Reliability of High Voltage Diodes", Microelectronic Reliability 43, p. 529, 2003.
    • (2003) Microelectronic Reliability , vol.43 , pp. 529
    • Lutz, J.1    Domeij, M.2
  • 8
    • 4944227122 scopus 로고    scopus 로고
    • Switching-Self-Clamping-Mode SSCM, a breakthrough in SOA performance for high voltage IGBTs and diodes
    • Kitakyushu, Japan, May
    • M.T. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder, "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes" Proc. ISPSD'04, pp. 437 440, Kitakyushu, Japan, May 2004.
    • (2004) Proc. ISPSD'04 , pp. 437440
    • Rahimo, M.T.1    Kopta, A.2    Eicher, S.3    Schlapbach, U.4    Linder, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.