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1
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0035272707
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Freewheeling diode reverse recovery failure modes in IGBT applications
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March/April
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M.T. Rahimo, N.Y.A. Shammas, "Freewheeling Diode Reverse Recovery Failure Modes in IGBT Applications" IEEE Transactions on Industrial Application, Vol. 37, No. 2, March/April 2001, pp 661 - 670.
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(2001)
IEEE Transactions on Industrial Application
, vol.37
, Issue.2
, pp. 661-670
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Rahimo, M.T.1
Shammas, N.Y.A.2
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2
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0036051387
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Extending the boundary limits of high voltage IGBTs and diodes to above 8kV
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Santa Fe, New Mexico, USA, June
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M.T. Rahimo, A. Kopta, S. Eicher, N. Kaminski, F. Bauer, U. Schlapbach, S. Linder, "Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8kV", Proc. ISPSD'02, pp. 41-44, Santa Fe, New Mexico, USA, June 2002.
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(2002)
Proc. ISPSD'02
, pp. 41-44
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Rahimo, M.T.1
Kopta, A.2
Eicher, S.3
Kaminski, N.4
Bauer, F.5
Schlapbach, U.6
Linder, S.7
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3
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0002032754
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High voltage (4kV) emitter short type diode (ESD)
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Japan May
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M. Kitagawa, K. Matsushita, A. Nakagawa, "High Voltage (4kV) Emitter Short Type Diode (ESD)", Proc. ISPSD'92, pp. 60-65, Japan May, 1992.
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(1992)
Proc. ISPSD'92
, pp. 60-65
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Kitagawa, M.1
Matsushita, K.2
Nakagawa, A.3
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4
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0031617641
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4.5kV high speed and rugged planar diode with novel carrier distribution control
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Kyoto, Japan, June
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K. Matsushita, T. Shinohe, M. Tsukuda, Y. Minami, J. Miwa, S. Yanagisawa, H. Ohashi, "4.5kV High Speed and Rugged Planar Diode with Novel Carrier Distribution Control", Proc. ISPSD'98, pp. 191-194, Kyoto, Japan, June 1998.
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(1998)
Proc. ISPSD'98
, pp. 191-194
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Matsushita, K.1
Shinohe, T.2
Tsukuda, M.3
Minami, Y.4
Miwa, J.5
Yanagisawa, S.6
Ohashi, H.7
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5
-
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0030674985
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Improvement of the diode characteristics using emitter- Controlled principles (EMCON-diode)
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Weimar, Germany, May
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A. Porst, F. Auerbach, H. Brunner, G. Deboy, F. Hille, "Improvement of the Diode Characteristics Using Emitter- Controlled Principles (EMCON-Diode)", Proc ISPSD'97, pp. 213-216, Weimar, Germany, May 1997.
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(1997)
Proc ISPSD'97
, pp. 213-216
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Porst, A.1
Auerbach, F.2
Brunner, H.3
Deboy, G.4
Hille, F.5
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6
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0031639099
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4.5kV soft recovery diode with carrier stored structure
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Kyoto, Japan, June
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K. Satoh, T. Nakagawa, K. Morishita, S. Koga, A. Kawakami, "4.5kV Soft Recovery Diode With Carrier Stored Structure", Proc. ISPSD'98, pp. 313 316, Kyoto, Japan, June 1998.
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(1998)
Proc. ISPSD'98
, pp. 313316
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Satoh, K.1
Nakagawa, T.2
Morishita, K.3
Koga, S.4
Kawakami, A.5
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7
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0037381389
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Dynamic avalanche and reliability of high voltage diodes
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J. Lutz, M. Domeij, "Dynamic Avalanche and Reliability of High Voltage Diodes", Microelectronic Reliability 43, p. 529, 2003.
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(2003)
Microelectronic Reliability
, vol.43
, pp. 529
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Lutz, J.1
Domeij, M.2
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8
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4944227122
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Switching-Self-Clamping-Mode SSCM, a breakthrough in SOA performance for high voltage IGBTs and diodes
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Kitakyushu, Japan, May
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M.T. Rahimo, A. Kopta, S. Eicher, U. Schlapbach, S. Linder, "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes" Proc. ISPSD'04, pp. 437 440, Kitakyushu, Japan, May 2004.
-
(2004)
Proc. ISPSD'04
, pp. 437440
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Rahimo, M.T.1
Kopta, A.2
Eicher, S.3
Schlapbach, U.4
Linder, S.5
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