The nn+-junction as the key to improved ruggedness and soft recovery of power diodes

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2825-2832

  Lutz, Josef ^a   Baburske, Roman ^a   Chen, Min ^a   Heinze, Birk ^a   Domeij, Martin ^b   Felsl, Hans Peter ^c   Schulze, Hans Joachim ^c  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Avalanche; Dynamic avalanche; Power diodes; Reverse recovery

Indexed keywords

A-DENSITY; AVALANCHE; FREE CARRIERS; HIGH-VOLTAGES; P-N JUNCTION; POWER DIODE; POWER DIODES; REVERSE RECOVERY; SILICON DEVICES; SPACE CHARGE REGIONS;

DIODES; ELECTRIC FIELDS; RECOVERY; SEMICONDUCTOR JUNCTIONS; SOLID-STATE SENSORS;

AVALANCHE DIODES;

EID: 70350712125     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2031019     Document Type: Article

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