Field Shielded Anode (FSA) concept enabling higher temperature operation of fast recovery diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 88-91

  Matthias, S ^a   Vobecky, J ^a   Corvasce, C ^a   Kopta, A ^a   Cammarata, M ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN PARAMETERS; FAST RECOVERY DIODES; LOCAL LIFETIME CONTROL; PLANAR JUNCTIONS; RADIATION DEFECTS; REVERSE BLOCKING; SPACE CHARGE REGIONS; TEMPERATURE OPERATION;

DEFECTS;

SEMICONDUCTOR DIODES;

EID: 84864750375     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890797     Document Type: Conference Paper

References (5)

1. A. Porst, F. Auerbach, H. Brunner, F. Hille, G. Deboy and F. Hille, "Improvement of the diode characteristics using emitter-controlled principles (EMCON-diode)," Proc. ISPSD'97, pp. 213-216, 1997.
2. J. Lutz and U. Scheuermann, "Advantages of the new controlled axial lifetime diode," Proc. PCIM'94, pp. 163, 1994.
3. A. Kopta, M. Rahimo and U. Schlapbach,"New Plasma Shaping Technology for Optimal High Voltage Diode Performance," Proc. EPE'07, pp 1-10, 2007.
4. J. Vobecky, P. Hazdra and J. Homola, "Optimization of Power Diode Characteristics by Means of Ion Irradiation," IEEE Transactions on Electron Devices, vol. 43 No. 12, pp. 2283-2289, 1996.
5. M. Nagasu, H. Kobayashi, T. Saiki, Y. Yasuda, R. Saitou and M. Mori; "3.3 kV IGBT Module having Soft Recovery Diodes with High Reverse Recovery dI/dt Capability (HiRC)," Proc. PCIM'98, pp. 175-178, 1998.