600 v reverse conducting (RC-)IGBT for drives applications in ultra-thin wafer technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 89-92

  Ruthing H ^a   Hille, F ^a   Niedernostheide, F J ^a   Schulze, H J ^a   Brunner, B ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; SWITCHING CIRCUITS; ULTRATHIN FILMS; VOLTAGE CONTROL; WSI CIRCUITS;

CHARGE CARRIER LIFETIME; IMPLANTATION DOSE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 39749160380     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294939     Document Type: Conference Paper

References (10)

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