The radiation enhanced diffusion (RED) diode realization of a large area p+p-n-n+ structure with high SOA

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 144-147

  Vobecky J ^a,b   Zahlava V ^b   Hemmann, K ^a   Arnold, M ^a   Rahimo, M ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED P-LAYER; CLAMPING DIODE; HIGH CURRENTS; HIGH VOLTAGE; P-LAYER; PEAK POWER; RADIATION-ENHANCED DIFFUSION; REFERENCE DIODES;

DIODES; PALLADIUM; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES;

AVALANCHE DIODES;

EID: 77949943222     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158022     Document Type: Conference Paper

References (8)

1. T. Wikstrom, T. Stiasny, M. Rahimo, D. Cottet, P. Streit, "The Corrugated P-Base IGCT - a New Benchmark for Large Area SOA Scaling", Proc. ISPSD'07, Jeju-Korea, pp. 29-32, 2007.
2. J. Vobecký, P. Hazdra,: Radiation Enhanced Diffusion of Palladium for Local Lifetime Control in Power Devices, IEEE Transactions on Electron Devices 54, p. 1521, 2007.
3. J. Vobecky, P. Hazdra "Dynamic Avalanche in Diodes with Local Lifetime Control by Means of Palladium", Microelectronics Journal, Vol. 39, pp. 878 - 883, 2008.
4. M. Chen, J. Lutz, H P. Felsl, H. J. Schulze, "Analysis of a p+p-n-n+ Diode Structure" Proc. ISPSD'08, Orlando, pp. 153-156, 2008.
5. J.-U. Sachse, J. Weber, H. Lemke, "Deep-level transient spectroscopy of Pd-H complexes in silicon", Phys. Review B, 61, pp.1924 - 1934, 2000.
6. J. Vobecky, P.Hazdra, "Fast Recovery Diode with Novel Local Lifetime Control", Proc. ISPSD 2006, pp.137-140, 2006.
7. J. Vobecky, V. Zahlava, V. Komarnitskyy, "P-i-N Diode with Burried Low Doped P-layer: Impact of Radiation Enhanced Diffusion from Sputtered Palladium on Device Parameters", Proc. ISPS'08, Prague, pp. 81-85, 2008.
8. M. D. Miller, "Differences Between Platinum- and Gold-Doped Silicon Power Devices," IEEE Trans. on Electr. Dev., ED-23, pp.1279 - 83, 1976.