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Volumn 43, Issue 11, 2010, Pages
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Characterization of the interface properties in a-Si : HHH/c-Si heterostructures by photoluminescence
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE SILICON WAFERS;
ENERGETIC POSITION;
EXCESS CARRIERS;
HETEROSTRUCTURES;
INTERFACE DEFECTS;
INTERFACE PROPERTY;
NUMERICAL MODELLING;
PHOTOLUMINESCENCE MEASUREMENTS;
QUASI-FERMI LEVEL;
QUASI-FERMI LEVEL SPLITTING;
SI LAYER;
SOLAR CELL PROCESSING;
SPLITTINGS;
SYMMETRICAL STRUCTURE;
VALENCE BAND EDGES;
CRYSTALS;
DEFECTS;
FERMI LEVEL;
FERMIONS;
PHOTOLUMINESCENCE;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON WAFERS;
SOLAR CELLS;
STRUCTURES (BUILT OBJECTS);
AMORPHOUS SILICON;
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EID: 77749283258
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/43/11/115102 Document Type: Article |
Times cited : (13)
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References (19)
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