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Volumn 517, Issue 14, 2009, Pages 4188-4191

Control of plasma process instabilities during thin silicon film deposition

Author keywords

Large area deposition; PECVD; Process instabilities; Thin silicon films

Indexed keywords

DEPOSITION CHAMBERS; DEPOSITION CONDITIONS; DIAGNOSTIC ABILITIES; DIRECT MEASUREMENTS; FILM DEPOSITIONS; FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPIES; FTIR; FTIR MEASUREMENTS; GAS RESIDENCES; IN-SITU; IN-SITU PROCESS; LARGE-AREA DEPOSITION; PECVD; PLASMA IMPEDANCES; PLASMA PROCESS; PLASMA PROPERTIES; PROCESS CHAMBERS; PROCESS INSTABILITIES; REACTANT CONCENTRATIONS; SELF-BIAS VOLTAGES; SILANE CONCENTRATIONS; SOLAR CELL PERFORMANCE; TECHNOLOGICAL PARAMETERS; THIN SILICON FILMS; THIN-FILMS; TRANSIENT STATE;

EID: 65149103939     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.02.003     Document Type: Article
Times cited : (11)

References (25)
  • 1
    • 65149092900 scopus 로고    scopus 로고
    • Ph.D. Thesis, Eindhoven University, The Netherlands
    • M.N. van den Donker, Ph.D. Thesis, Eindhoven University, The Netherlands, 2006.
    • (2006)
    • van den Donker, M.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.