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Volumn 326, Issue , 2011, Pages 139-143
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Molecular beam epitaxy of cu-doped BaSi2 films on Si(111) substrate and evaluation & qualification of depth profiles of Cu atoms for the formation of efficient solar cells.
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Author keywords
Al; BaSi2; Carrier concentration; Cu dopant; Depth profile; Efficiency; Four point probe method; Knudsen cell; MBE; N type; Pn junction; Resistivity; RHEED; Sb; SIMS; Solar cells; Van der pauw technique; XRD
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Indexed keywords
BASI2;
DEPTH PROFILE;
FOUR-POINT PROBE METHOD;
KNUDSEN CELL;
N-TYPE;
P-N JUNCTION;
VAN DER PAUW TECHNIQUE;
XRD;
ALUMINUM;
ANTIMONY;
ATOMIC SPECTROSCOPY;
CRYSTAL ATOMIC STRUCTURE;
EFFICIENCY;
ELECTRIC CONDUCTIVITY;
ELECTRIC PROPERTIES;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
PROBES;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
SOLAR CELLS;
SOLAR ENERGY;
SPACE APPLICATIONS;
SURFACE SEGREGATION;
TECHNOLOGY;
X RAY DIFFRACTION;
CARRIER CONCENTRATION;
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EID: 80053232714
PISSN: 10226680
EISSN: None
Source Type: Book Series
DOI: 10.4028/www.scientific.net/AMR.326.139 Document Type: Conference Paper |
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Times cited : (6)
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References (14)
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