Variation study of the planar ground-plane bulk MOSFET, SOI FinFET, and trigate bulk MOSFET designs

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3294-3299

  Sun, Xin ^a   Moroz, Victor ^b   Damrongplasit, Nattapol ^a   Shin, Changhwan ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SYNOPSYS INC   (United States)

Author keywords

Fin shaped FET; metal oxide semiconductor field effect transistor (MOSFET); multigate FET; variability

Indexed keywords

BULK MOSFET; FIN-SHAPED FET; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MULTIGATE FET; PROCESS-INDUCED VARIATION; RANDOM VARIATION; SOI FINFETS; TRANSISTOR PERFORMANCE; TRIGATE; VARIABILITY;

INTEGRATED CIRCUITS; LOGIC DESIGN; MESFET DEVICES; TRANSISTORS;

MOSFET DEVICES;

EID: 80053209573     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2161479     Document Type: Article

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