Steep channel & halo profiles utilizing boron-diffusion-barrier layers (Si:C) for 32 nm node and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2008, Pages 112-113

  Hokazono, A ^a   Itokawa, H ^b   Kusunoki, N ^c   Mizushima, I ^c   Inaba, S ^a   Kawanaka, S ^a   Toyoshima, Y ^a  

^a SoC Research and Development Center   (Japan)

^b Process and Manufacturing Engineering Center   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; CELLULAR RADIO SYSTEMS; EPITAXIAL LAYERS; NONMETALS; SILICON; TECHNOLOGY;

BARRIER LAYERS; CHANNEL PROFILE; NON-DOPED; VLSI TECHNOLOGIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51949090127     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2008.4588583     Document Type: Conference Paper

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