Using planarized p-GaN layer to reduce electrostatic discharged damage in nitride-based light-emitting diode

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 17-19, 2007, Pages

  Lee, Chi Ling ^a   Lee, Wei I ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

ESD; GaN; InGaN; Light emitting diode; MOCVD; Planarized p GaN layer

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; SUBSTRATES;

ELECTROSTATIC DISCHARGE STRESS; PLANARIZED P-GAN LAYER;

ELECTROSTATICS;

EID: 34547910290     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L457     Document Type: Article

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