High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 91-94

  Chen, Chin Hsiang ^a   Chang, Shoou Jinn ^b   Su, Yan Kuin ^b  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; ETCHING; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ELECTROSTATIC DISCHARGE; ELECTROSTATIC DISCHARGE PROTECTION;

LIGHT EMITTING DIODES;

EID: 0348146363     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303496     Document Type: Article

References (7)

1. H. C. Neitzert and A. Piccirillo, Microelectron. Reliab. 39, 1863 (1999).
2. S. P. Sim, M. J. Robertson, and R. G. Plumb, J. Appl. Phys. 55, 3950 (1984).
3. T. Inoue, Japanese Patent H11-040848 (1999).
4. G. T. Dang, A. P. Zhang, F. Ren, X. A. Cao, S. J. Pearton, H. Cho, J. Han, J. I. Chyi, C. M. Lee, C. C. Chuo, S. N. G. Chu, and R. G. Wilson, IEEE Trans. Electron. Devices 47, 692 (2000).
5. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, IEEE Photonics Technol. Lett. 13, 848 (2001).
6. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, IEEE Sens. J. 2, 366 (2002).
7. C. H. Chen, S. J. Chang, Y. K. Su, J. K. Shen, J. F. Sheu, J. F. Chen, C. H. Kuo, and Y. C. Lin, IEEE Photo. Technol. Lett. 14, 908 (2002).