Crystal orientation control of bismuth layer-structured dielectric films using interface layers of perovskite-type oxides

Japanese Journal of Applied Physics

Volumn 50, Issue 9 PART 3, 2011, Pages

  Kondoh, Yohta ^a   Sasajima, Keiichi ^a   Hayashi, Mari ^a   Kimura, Junichi ^b   Takuwa, Itaru ^b   Ehara, Yoshitaka ^b   Funakubo, Hiroshi ^b   Uchida, Hiroshi ^a  

^a SOPHIA UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS DISPERSIONS; CHEMICAL SOLUTION DEPOSITION; CRYSTAL ORIENTATION CONTROL; CRYSTALLINITIES; DIP COATING; FILM DEPOSITION; INTERFACE LAYER; LATTICE MATCHING; OXIDE INTERFACES; PEROVSKITE TYPE OXIDES; PLATINIZED SILICON WAFERS; SI SUBSTRATES; TILTING ANGLE;

BISMUTH; CALCIUM; CRYSTAL ORIENTATION; DEPOSITION; DIELECTRIC FILMS; FILM PREPARATION; MOS DEVICES; NANOSHEETS; NIOBIUM; OXIDE FILMS; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES;

INTERFACES (MATERIALS);

EID: 80053083926     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.09NA04     Document Type: Article

References (32)

1. B. Aurivillius: Ark. Kemi 1 (1949) 463.
2. A. R. James, G. S. Kumar, S. B. Suyanarayana, and T. Bhimasankaram: Ferroelectrics 216 (1998) 11.
3. K. Kato, K. Suzuki, K. Nishizawa, and T. Miki: Jpn. J. Appl. Phys. 40 (2001) 5580.
4. K. Kato, K. Suzuki, K. Nishizawa, and T. Miki: Appl. Phys. Lett. 78 (2001) 1119.
5. H. Uchida, K. Sakurai, I. Okada, H. Matsuda, T. Iijima, T. Kojima, T. Watanabe, and H. Funakubo: Jpn. J. Appl. Phys. 42 (2003) 5990.
6. T. Takenaka and K. Sakata: Jpn. J. Appl. Phys. 19 (1980) 31.
7. T. Takeuchi, T. Tani, and Y. Saito: Jpn. J. Appl. Phys. 38 (1999) 5553.
8. H. Ogawa, M. Kimura, A. Ando, and Y. Sakabe: Jpn. J. Appl. Phys. 40 (2001) 5715.
9. A. Z. Simoes, L. S. Cavalcante, E. Longo, J. A. Varela, C. S. Riccardi, and B. Mizaikoff: Appl. Phys. Lett. 90 (2007) 082910.
10. K. W. Kwok and H. Y. Wong: J. Phys. D 42 (2009) 095419.
11. Y. Park, M. Miyayama, and T. Kudo: J. Ceram. Soc. Jpn. 107 (1999) 413.
12. H. Irie and M. Miyayama: Appl. Phys. Lett. 79 (2001) 251.
13. H. Irie, M. Miyayama, and T. Kudo: J. Appl. Phys. 90 (2001) 4089.
14. K. Takahashi, M. Suzuki, T. Kojima, T. Watanabe, Y. Sakashita, K. Kato, O. Sakata, K. Sumitani, and H. Funakubo: Appl. Phys. Lett. 89 (2006) 082901.
15. K. Takahashi, M. Suzuki, T. Oikawa, T. Kojima, T. Watanabe, and H. Funakubo: Chem. Vapor Deposition 12 (2006) 136.
16. Y. Mizutani, H. Uchida, H. Funakubo, and S. Koda: Jpn. J. Appl. Phys. 48 (2009) 09KA10.
17. Y. Mizutani, T. Kiguchi, T. J. Konno, H. Funakubo, and H. Uchida: Jpn. J. Appl. Phys. 49 (2010) 09MA02.
18. P. Padmini, T. R. Taylor, M. J. Lefevre, A. S. Nagra, R. A. York, and J. S. Speck: Appl. Phys. Lett. 75 (1999) 3186.
19. C. B. Parker, J. P. Maria, and A. I. Kingon: Appl. Phys. Lett. 81 (2002) 340.
20. Y. Ebina, T. Sasaki, and M. Watanabe: Solid State Ionics 151 (2002) 177.
21. F. F. Xu, Y. Ebina, Y. Bando, and T. Sasaki: J. Phys. Chem. B 107 (2003) 9638.
22. K. Kikuta, K. Noda, S. Okumura, T. Yamaguchi, and S. Hirano: J. Sol-Gel Sci. Technol. 42 (2007) 381.
23. T. Shibata, K. Fukuda, Y. Ebina, T. Kogure, and T. Sasaki: Adv. Mater. 20 (2008) 231.
24. M. Osada and T. Sasaki: J. Mater. Chem. 19 (2009) 2503.
25. M. Osada, K. Akatsuka, Y. Ebina, H. Funakubo, K. Ono, K. Takada, and T. Sasaki: ACS Nano 4 (2010) 5225.
26. M. Ibrahim, N. F. H. Bright, and J. F. Rowland: J. Am. Ceram. Soc. 45 (1962) 329.
27. P. Conflant, J. C. Boivin, and D. Thomas: J. Solid State Chem. 18 (1976) 133.
28. Y. Guo, K. Suzuki, K. Nishizawa, T. Miki, and K. Kato: J. Cryst. Growth 284 (2005) 190.
29. H. Suzuki, T. Naoe, H. Miyazaki, and T. Ota: J. Eur. Ceram. Soc. 27 (2007) 3769.
30. N. Sakamoto, H. Yoshioka, J. Suzuki, T. Suzuki, N. Wakiya, and H. Suzuki: J. Ceram. Soc. Jpn. 118 (2010) 669.
31. M. Takahashi, Y. Noguchi, and M. Miyayama: Jpn. J. Appl. Phys. 41 (2002) 7053.
32. Y. Noguchi, M. Soga, M. Takahashi, and M. Miyayama: Jpn. J. Appl. Phys. 44 (2005) 6998.