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Volumn 49, Issue 9 PART 2, 2010, Pages

Crystal structure and dielectric property of bismuth layer-structured dielectric films with c-axis preferential crystal orientation

(5) Mizutani, Yuki a Kiguchi, Takanori b Konno, Toyohiko J b Funakubo, Hiroshi c Uchida, Hiroshi a

a SOPHIA UNIVERSITY (Japan)

b TOHOKU UNIVERSITY (Japan)

c TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; BISMUTH COMPOUNDS; DEPOSITION; DIELECTRIC FILMS; DIELECTRIC PROPERTIES; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; NICKEL COMPOUNDS; PEROVSKITE; RUTHENIUM COMPOUNDS; STRONTIUM TITANATES; SUBSTRATES; TEMPERATURE DISTRIBUTION; THIN FILMS;

BISMUTH LAYER-STRUCTURED; CHEMICAL SOLUTION DEPOSITION TECHNIQUES; PEROVSKITE OXIDES; PEROVSKITE STRUCTURES; SRTIO3 SUBSTRATES; SUBSTRATE SURFACE; TEMPERATURE DEPENDENCE; VARIOUS SUBSTRATES;

CRYSTAL ORIENTATION;

EID: 78049348052 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.09MA02 Document Type: Conference Paper

Times cited : (13)

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