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Japanese Journal of Applied Physics

Volumn 48, Issue 9 Part 2, 2009, Pages

Preparation of (001)-oriented CaBi4Ti4O15 and SrBi4Ti4O15 films using LaNiO3 nucleation layer on Pt-passivated Si wafer

(4) Mizutani, Yuki a Uchida, Hiroshi a Funakubo, Hiroshi b Koda, Seiichiro a

a SOPHIA UNIVERSITY (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; BISMUTH-LAYER-STRUCTURED; CHEMICAL SOLUTION DEPOSITION TECHNIQUES; CRYSTALLINE PHASE; DEGREE OF CRYSTALLINITY; DIELECTRIC CONSTANTS; LATTICE MATCHING; NUCLEATION LAYERS; PEROVSKITE STRUCTURES; ROOM TEMPERATURE; SI SUBSTRATES; SI WAFER; TEMPERATURE RANGE; TIO;

BARIUM; BISMUTH; FILM PREPARATION; OXIDE MINERALS; PEROVSKITE; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; THIN FILMS;

CRYSTAL ORIENTATION;

EID: 77952718955 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.09KA10 Document Type: Article

Times cited : (9)

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