An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1535-1539

  Miranda, E ^a   Mahata, C ^b   Das, T ^b   Maiti, C K ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED STRESS; CIRCUIT MODELS; CONSTANT VOLTAGE STRESS; CURRENT MAGNITUDES; CURRENT-TIME CHARACTERISTICS; EXPERIMENTAL DATA; LOCAL DEGRADATION; MIS STRUCTURE; OXIDE LAYER; PARALLEL RESISTANCE; PROGRESSIVE BREAKDOWN;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

LEAKAGE CURRENTS;

EID: 80052930481     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.035     Document Type: Conference Paper

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