Layer number determination and thickness-dependent properties of graphene grown on SiC

IEEE Transactions on Nanotechnology

Volumn 10, Issue 5, 2011, Pages 1196-1201

  Zhu, Wenjuan ^a   Dimitrakopoulos, Christos ^a   Freitag, Marcus ^a   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Electrical properties; graphene; scanning electron microscopy (SEM); silicon carbide (SiC) substrate

Indexed keywords

2 LAYER; DENSITY OF STATE; HALL COEFFICIENT; HEIGHT DETERMINATION; LAYER NUMBER; NATURAL GRAPHITE; NUMBER OF LAYERS; OPTICAL CONTRAST; PEAK VALUES; SCANNING ELECTRONS; STACKING ORDER;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

GRAPHENE;

EID: 80052614060     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2130536     Document Type: Article

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