Effect of oxygen partial pressure and VO2 content on hexagonal WO3 thin films synthesized by pulsed laser deposition technique

Journal of Nanoparticle Research

Volumn 13, Issue 6, 2011, Pages 2485-2496

  Kaushal, Ajay ^a   Kaur, Davinder ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

Nanolayers; Oxygen partial pressure; Pulsed laser deposition; Synthesis; WO3 VO2

Indexed keywords

CATHODIC PEAK; CYCLIC VOLTAMMOGRAMS; EFFECT OF OXYGEN; HEXAGONAL PHASE; HEXAGONAL WO; NANO LAYERS; NANOCOMPOSITE THIN FILMS; NANOCRYSTALLINES; OXIDATION STATE; OXYGEN PARTIAL PRESSURE; PULSED-LASER DEPOSITION TECHNIQUE; RED SHIFT; STRUCTURAL AND OPTICAL PROPERTIES; THIN-FILM ELECTRODE; TUNGSTEN IONS; VACUUM-ANNEALING; WO3-VO2; XRD;

CRYSTALLITE SIZE; DEPOSITION; ELECTROCHEMICAL PROPERTIES; METAL IONS; NANOCOMPOSITE FILMS; NANOCOMPOSITES; OPTICAL PROPERTIES; OXYGEN; OXYGEN VACANCIES; PARTIAL PRESSURE; POSITIVE IONS; PRESSURE EFFECTS; PULSED LASER DEPOSITION; PULSED LASERS; THIN FILMS; TUNGSTEN; VACUUM; VAPOR DEPOSITION;

OPTICAL FILMS;

OXYGEN; TUNGSTEN DERIVATIVE; TUNGSTEN TRIOXIDE; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; CYCLIC POTENTIOMETRY; OXYGEN TENSION; PRIORITY JOURNAL; X RAY DIFFRACTION;

EID: 80052572651     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-010-0141-x     Document Type: Article

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