Electronic structure of W-doped VO2 thin films with giant metal-insulator transition investigated by hard X-ray core-level photoemission spectroscopy

Applied Physics Express

Volumn 3, Issue 6, 2010, Pages

  Takami, Hidefumi ^a   Kanki, Teruo ^a   Ueda, Shigenori ^b   Kobayashi, Keisuke ^b   Tanaka, Hidekazu ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATE; CORE LEVEL PHOTOEMISSION SPECTROSCOPY; CORE-LEVEL SPECTRA; ELECTRON-DOPING; HARD X RAY; HIGH TEMPERATURE COEFFICIENT; ROOM TEMPERATURE; SATELLITE STRUCTURE; VALENCE STATE;

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; LUMINESCENCE OF ORGANIC SOLIDS; METAL INSULATOR BOUNDARIES; PHOTOEMISSION; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS;

METAL INSULATOR TRANSITION;

EID: 77953523928     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.063201     Document Type: Article

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