Investigations of field-evaporated end forms in voltage- and laser-pulsed atom probe tomography

Ultramicroscopy

Volumn 109, Issue 5, 2009, Pages 472-479

  Shariq, A ^a   Mutas, S ^a   Wedderhoff, K ^a   Klein, C ^b   Hortenbach, H ^c   Teichert, S ^c   Kucher P ^a   Gerstl, S S A ^d  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^d Imago Scientific Instruments   (United States)

Author keywords

Field evaporation; Laser pulsed atom probe; Scanning electron microscopy (SEM); Tomographic atom probe (TAP)

Indexed keywords

3-DIMENSIONAL; ATOM-PROBE TOMOGRAPHIES; CRYSTALLOGRAPHIC ORIENTATIONS; FIELD EVAPORATION; FOCUSED LASER BEAMS; ION EMITTERS; LASER CONDITIONS; LASER ENERGIES; LASER POWER; LASER PULSING; PULSED MODES; RADIUS MEASUREMENTS; SEQUENTIAL ANALYSIS; SPECIMEN TEMPERATURES; TIP SHAPES; TOMOGRAPHIC ATOM PROBE (TAP); VISUAL INSPECTIONS; VOLTAGE PULSE;

ATOMS; DIAGNOSTIC RADIOGRAPHY; ELECTRON MICROSCOPES; ELECTRONS; EVAPORATION; LASER BEAM EFFECTS; LASER BEAMS; LASERS; PROBES; SCANNING; SCANNING ELECTRON MICROSCOPY; TOMOGRAPHY; VAPORS; VISUAL COMMUNICATION;

PULSED LASER APPLICATIONS;

SILICON;

ARTICLE; ATOM PROBE TOMOGRAPHY; ELECTRIC POTENTIAL; EVAPORATION; FIELD EVAPORATION; LASER; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DEPENDENCE; TOMOGRAPHY;

EID: 62549088267     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.10.001     Document Type: Article

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