Effect of anodic interface layers on the unipolar switching of HfO 2-based resistive RAM

Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Volumn , Issue , 2010, Pages 140-141

  Wang, X P ^a   Chen, Y Y ^a,b   Pantisano, L ^a   Goux, L ^a   Jurczak, M ^a   Groeseneken, G ^a,b   Wouters, D J ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANODE ELECTRODE MATERIALS; ANODE ELECTRODES; CAPPING LAYER; INTERFACE LAYER; MOLAR GIBBS ENERGIES; OXIDE FORMATION; RELATIVE STABILITIES; SWITCHING BEHAVIORS; THERMODYNAMIC PARAMETER; TIO; UNIPOLAR SWITCHING;

ANODES; ELECTROCHEMICAL ELECTRODES; HAFNIUM COMPOUNDS; PLATINUM; TITANIUM NITRIDE;

SWITCHING;

EID: 77957905759     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2010.5488914     Document Type: Conference Paper

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