Self-aligned sidewall gated resonant tunneling transistors

Applied Physics Letters

Volumn 69, Issue 3, 1996, Pages 374-376

  Kolagunta, V R ^a   Janes, D B ^a   Chen, G L ^a   Webb, K J ^a   Melloch, M R ^a   Youtsey, C ^b  

^a PURDUE UNIVERSITY   (United States)

^b United States of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000211379     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118065     Document Type: Article

References (12)

1. M. A. Reed, J. N. Randall, R. J. Aggrawal, R. J. Matyi, T. M. Moore, and A. E. Wetsel, Phys. Rev. Lett. 60, 535 (1988).
2. S. Tarucha, T. Honda, T. Saku, and Y. Tokura, Surf. Sci. 305, 547 (1994).
3. D. G. Austing, T. Honda, Y. Tokura, and S. Tarucha, Jpn. J. Appl. Phys. 34, 1320 (1995).
4. T. Akeyoshi, K. Maezawa, and T. Mizutani, IEEE Trans. Electron Devices 41, 148 (1994).
5. M. W. Dellow, P. H. Beton, M. Henini, P. C. Main, and L. Eaves, Electron. Lett. 27, 134 (1991).
6. P. Gueret, N. Blanc, R. Germann, and H. Rothuizen, Semicond. Sci. Technol. 7, B462 (1992).
7. P. H. Beton, M. W. Dellow, P. C. Main, T. J. Foster, A. F. Jezierski, M. Henini, S. P. Beaumont, and C. D. W. Wilkinson, Appl. Phys. Lett. 60, 2508 (1992).
8. C. J. Goodings, H. Mizuta, J. R. A. Cleaver, and H. Ahmed, J. Appl. Phys. 76, 1276 (1994).
9. W. C. B. Peatman, E. R. Brown, M. J. Rooks, P. Maki, W. J. Grimm, and M. Shur, IEEE Electron Device Lett. 15, 236 (1994).
10. V. R. Kolagunta, G. Chen, D. B. Janes, K. J. Webb, and M. R. Melloch, Superlattices Microstruct. 17, 339 (1995).
11. G. Klimeck, G. Chen, and S. Datta, Phys. Rev. B 50, 2316 (1994).
12. M. P. Patkar, T. P. Chin, J. M. Woodall, M. S. Lundstrom, and M. R. Melloch, Appl. Phys. Lett. 66, 1412 (1995).