Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures

Superlattices and Microstructures

Volumn 20, Issue 4, 1996, Pages 561-567

  Weckwerth, M V ^a   Simmons, J A ^a   Harff, N E ^a,b   Sherwin, M E ^a,c   Blount, M A ^a   Baca, W E ^a   Chui, H C ^a,d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b OREGON STATE UNIVERSITY   (United States)

^c Microwave Signal Inc   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

Backgates; Fabrication; Two dimensional electron gas

Indexed keywords

ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON GAS; EPITAXIAL LAYER STRUCTURES; EPOXY BOND AND STOP-ETCH TECHNIQUE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030411111     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0115     Document Type: Article

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