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Volumn 82, Issue 5, 2011, Pages

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements

Author keywords

[No Author keywords available]

Indexed keywords

AC EXCITATION; BROAD TEMPERATURE RANGES; CAPACITANCE BRIDGE; CRYOGENIC TEMPERATURES; DENSITY OF STATE; EXCITATION AMPLITUDES; GAAS HEMT; GRAPHENE DEVICES; HIGH RESOLUTION; HIGHLY SENSITIVE; QUANTUM CAPACITANCE; ROOM TEMPERATURE; TEMPERATURE RANGE;

EID: 79958067523     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3582068     Document Type: Article
Times cited : (19)

References (25)
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    • 0001500878 scopus 로고
    • 10.1103/PhysRevB.26.5882
    • P. A. Lee, Phys. Rev. B 26, 5882 (1982). 10.1103/PhysRevB.26.5882
    • (1982) Phys. Rev. B , vol.26 , pp. 5882
    • Lee, P.A.1
  • 4
    • 36549091403 scopus 로고
    • 10.1063/1.99649
    • S. Luryi, Appl. Phys. Lett. 52, 501 (1988). 10.1063/1.99649
    • (1988) Appl. Phys. Lett. , vol.52 , pp. 501
    • Luryi, S.1
  • 5
    • 33749350731 scopus 로고    scopus 로고
    • Measurement of the quantum capacitance of interacting electrons in carbon nanotubes
    • DOI 10.1038/nphys412, PII NPHYS412
    • S. Ilani, L. A. K. Donev, M. Kindermann, and P. L. McEuen, Nat. Phys. 2, 687 (2006). 10.1038/nphys412 (Pubitemid 44498152)
    • (2006) Nature Physics , vol.2 , Issue.10 , pp. 687-691
    • Ilani, S.1    Donev, L.A.K.2    Kindermann, M.3    McEuen, P.L.4
  • 6
    • 0038788231 scopus 로고    scopus 로고
    • Agilent Technologies, Inc., (Agilent Technologies)
    • Agilent Technologies, Inc., Impedance Measurement Handbook (Agilent Technologies, 2009).
    • (2009) Impedance Measurement Handbook
  • 10
    • 79958065114 scopus 로고    scopus 로고
    • Ph.D. dissertation, Department of Physics, Massachusetts Institute of Technology
    • G. Steele, Ph.D. dissertation, Department of Physics, Massachusetts Institute of Technology, 2006.
    • (2006)
    • Steele, G.1
  • 12
    • 79958039055 scopus 로고    scopus 로고
    • Several other commercially available HEMTs, including the Agilent ATF 33143 and 34143, were found to be unsuitable in our measurements due to high-frequency (MHz) transport resonances
    • Several other commercially available HEMTs, including the Agilent ATF 33143 and 34143, were found to be unsuitable in our measurements due to high-frequency (MHz) transport resonances.
  • 13
    • 79958063516 scopus 로고    scopus 로고
    • Measured via an Agilent B1500A parameter analyzer and Keithley 2612
    • Measured via an Agilent B1500A parameter analyzer and Keithley 2612.
  • 14
    • 79958058509 scopus 로고    scopus 로고
    • All measurements were performed in the dark to prevent optical excitation of the exposed 2DEG in the HEMT. After cooling, HEMTs were temporarily exposed to light, to enable navigating probes to pads, so persistent photoconductivity may affect HEMT characteristics at 77 and 4 K
    • All measurements were performed in the dark to prevent optical excitation of the exposed 2DEG in the HEMT. After cooling, HEMTs were temporarily exposed to light, to enable navigating probes to pads, so persistent photoconductivity may affect HEMT characteristics at 77 and 4 K.
  • 15
    • 79958027768 scopus 로고    scopus 로고
    • Measurement time tmeas is proportional to the lock-in time constant and filter slope (Stanford Research Systems SRS830 Manual)
    • Measurement time tmeas is proportional to the lock-in time constant and filter slope (Stanford Research Systems SRS830 Manual).
  • 16
    • 79958048038 scopus 로고    scopus 로고
    • load∼ 50 S
    • load∼ 50 S.
  • 17
    • 79958040237 scopus 로고    scopus 로고
    • In such devices with a bandgap, the shunt capacitance can be measured by gating the DUT so that the Fermi level lies in the gap, thus removing the contribution of the DUT to the measured capacitance. The measured shunt capacitance for the nanotube device and bridge was 850 aF. The bond wires for the graphene device were somewhat longer, so we conservatively allow for a shunt capacitance ten times larger
    • In such devices with a bandgap, the shunt capacitance can be measured by gating the DUT so that the Fermi level lies in the gap, thus removing the contribution of the DUT to the measured capacitance. The measured shunt capacitance for the nanotube device and bridge was 850 aF. The bond wires for the graphene device were somewhat longer, so we conservatively allow for a shunt capacitance ten times larger.
  • 18
    • 79958071434 scopus 로고    scopus 로고
    • b)
    • b).
  • 19
    • 79958046456 scopus 로고    scopus 로고
    • The minimum capacitance is limited by the temperature, disorder, and DUT parallel shunt capacitances (Ref. 21)
    • The minimum capacitance is limited by the temperature, disorder, and DUT parallel shunt capacitances (Ref. 21).
  • 20
    • 79958055589 scopus 로고    scopus 로고
    • The measurements were acquired with the lock-in low pass filter set to 24 dB/oct rolloff and a 3 s time constant, corresponding to 38.4 s of acquisition per data point
    • The measurements were acquired with the lock-in low pass filter set to 24 dB/oct rolloff and a 3 s time constant, corresponding to 38.4 s of acquisition per data point.
  • 25
    • 79958061652 scopus 로고    scopus 로고
    • Comparative measurements were made on the same graphene device using the Andeen-Hagerling AH2700A Ultra-precision Capacitance/Loss Bridge. To avoid perturbing the DUT, the integrated bridge was left bonded ufor these measurements. However, it was powered down, and probes driven by the AH2700A directly contacted pads attached to the graphene and its gate, bypassing the integrated bridge circuitry and isolating the capacitance of the graphene device. The shunt capacitance of the integrated bridge (∼10fF) should have no effect on the noise in the AH2700As capacitance measurements-indeed, the AH2700A performed to its manufacturers specifications for noise
    • Comparative measurements were made on the same graphene device using the Andeen-Hagerling AH2700A Ultra-precision Capacitance/Loss Bridge. To avoid perturbing the DUT, the integrated bridge was left bonded up for these measurements. However, it was powered down, and probes driven by the AH2700A directly contacted pads attached to the graphene and its gate, bypassing the integrated bridge circuitry and isolating the capacitance of the graphene device. The shunt capacitance of the integrated bridge (∼10fF) should have no effect on the noise in the AH2700As capacitance measurements-indeed, the AH2700A performed to its manufacturers specifications for noise.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.