Effect of argon addition on the growth of thick single crystal diamond by high-power plasma CVD

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 9, 2011, Pages 2028-2032

  Tallaire, Alexandre ^a   Rond, Catherine ^a   Bénédic, Fabien ^a   Brinza, Ovidiu ^a   Achard, Jocelyn ^a   Silva, François ^a   Gicquel, Alix ^a  

^a CNRS   (France)

Author keywords

argon addition; plasma simulation; plasma spectroscopy; single crystal diamond

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CRYSTAL MORPHOLOGIES; CRYSTAL QUALITIES; GAS TEMPERATURE; GASPHASE; HIGH-POWER; MICROWAVE POWER; PLASMA POWER; PLASMA SPECTROSCOPY; PLASMA-CVD; POLYCRYSTALLINE DIAMONDS; SINGLE CRYSTAL DIAMOND; SINGLE-CRYSTAL FILMS;

ARGON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; EMISSION SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; PLASMA SIMULATION; SINGLE CRYSTALS; SYNTHETIC DIAMONDS;

PLASMA DEPOSITION;

EID: 80052467139     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100017     Document Type: Article

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