Surface termination control in chemically deposited PbS films: Nucleation and growth on GaAs(111)A and GaAs(111)B

Journal of Physical Chemistry C

Volumn 115, Issue 33, 2011, Pages 16501-16508

  Osherov, A ^a   Matmor, M ^a   Froumin, N ^a   Ashkenasy, N ^a   Golan, Y ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT POTENTIAL DIFFERENCE; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTRONIC DEVICE; FILM DEPOSITION; GAAS; NUCLEATION AND GROWTH; SUBSTRATE SURFACE; SURFACE OXIDE; SURFACE TERMINATION;

ARSENIC; GALLIUM ARSENIDE; HETEROJUNCTIONS; LEAD OXIDE; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 80051949763     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp204175e     Document Type: Article

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