Interfacial characterization of chemical solution-deposited thin films of PbSe on GaAs(100)

Surface and Interface Analysis

Volumn 40, Issue 5, 2008, Pages 939-943

  Shandalov, Michael ^a   Rozenblat, Avraham ^b   Kedem, Nir ^b   Popovitz Biro, Ronit ^c   Golan, Yuval ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

^b Intel Electronics Ltd   (Israel)

^c WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

Chemical deposition; Composition; GaAs; Interface; Microstructure; PbSe

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAD COMPOUNDS; MICROSTRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE CHEMISTRY;

AMORPHOUS INTERMEDIATE LAYERS; CHEMICAL DEPOSITION; INTERFACIAL LAYERS;

THIN FILMS;

EID: 44149121928     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2811     Document Type: Article

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