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Volumn 130-132, Issue , 1998, Pages 398-402
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Polar surface dependence of epitaxy processes: ZnSe on GaAs{111}A, B-(2×2)
a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
ELECTRON DIFFRACTION;
EPITAXIAL GROWTH;
REACTION KINETICS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
SURFACE STRUCTURE;
THIN FILMS;
ZINC SELENIDE;
SEMICONDUCTING FILMS;
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EID: 9744282129
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(98)00090-7 Document Type: Article |
Times cited : (4)
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References (19)
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