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Volumn 80, Issue 23, 2009, Pages

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

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EID: 77954740921     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.233303     Document Type: Article
Times cited : (6)

References (26)
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    • H. Gatos, Science 137, 311 (1962). 10.1126/science.137.3527.311
    • (1962) Science , vol.137 , pp. 311
    • Gatos, H.1
  • 15
    • 0034344009 scopus 로고    scopus 로고
    • 10.1002/1521-3951(200004)218:2<329::AID-PSSB329>3.0.CO;2-I
    • K. Jacobi, J. Platen, and C. Setzer, Phys. Status Solidi 218, 329 (2000). 10.1002/1521-3951(200004)218:2<329::AID-PSSB329>3.0.CO;2-I
    • (2000) Phys. Status Solidi , vol.218 , pp. 329
    • Jacobi, K.1    Platen, J.2    Setzer, C.3
  • 17
    • 77954705345 scopus 로고    scopus 로고
    • Subsurface Arsenic interstitials appear as a result of formation of As vacancies under surface stress. The presence of As dangling bonds, which produce an approximately similar component (Ref.) is contradicted by the facts that i) the latter component appears after annealing and, therefore, could only come from thermal removal of sulfur, which is known to occur rather via desorption of As-S and breaking of underlying Ga-As bonds. (ii) For the similar (001) surface, the wet treatment forms a chemically stable nitride film, resistant to oxidation under air exposure. (Ref.).
    • Subsurface Arsenic interstitials appear as a result of formation of As vacancies under surface stress. The presence of As dangling bonds, which produce an approximately similar component (Ref.) is contradicted by the facts that i) the latter component appears after annealing and, therefore, could only come from thermal removal of sulfur, which is known to occur rather via desorption of As-S and breaking of underlying Ga-As bonds. (ii) For the similar (001) surface, the wet treatment forms a chemically stable nitride film, resistant to oxidation under air exposure. (Ref.).
  • 18
    • 11644309717 scopus 로고    scopus 로고
    • Because of the smaller photon flux at the required photon energy of 450 eV and of the smaller photoemission cross section, the number of N 1s photoemitted electrons per atom is about 2 orders of magnitude smaller than for Ga 3d. Although for plasma nitridation the nitrogen thickness is much larger than one monolayer, to our knowledge, only one work reports N1S CLS., 10.1116/1.589776
    • Because of the smaller photon flux at the required photon energy of 450 eV and of the smaller photoemission cross section, the number of N 1 s photoemitted electrons per atom is about 2 orders of magnitude smaller than for Ga 3 d. Although for plasma nitridation the nitrogen thickness is much larger than one monolayer, to our knowledge, only one work reports N1S CLS. C. Huh, S. J. Park, S. Ahn, J. Y. Han, K. J. Cho, and J. M. Seo, J. Vac. Sci. Technol. B 16, 192 (1998). 10.1116/1.589776
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 192
    • Huh, C.1    Park, S.J.2    Ahn, S.3    Han, J.Y.4    Cho, K.J.5    Seo, J.M.6
  • 23
    • 33646282806 scopus 로고
    • 10.1103/PhysRevLett.60.1049
    • R. Wolkow and Ph. Avouris, Phys. Rev. Lett. 60, 1049 (1988). 10.1103/PhysRevLett.60.1049
    • (1988) Phys. Rev. Lett. , vol.60 , pp. 1049
    • Wolkow, R.1    Avouris, Ph.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.