Thermal conductivity measurement of porous silicon by the pulsed-photothermal method

Journal of Physics D: Applied Physics

Volumn 44, Issue 35, 2011, Pages

  Amin Chalhoub, E ^a   Semmar, N ^a   Coudron, L ^b   Gautier, G ^b   Boulmer Leborgne, C ^a   Petit, A ^a   Gaillard, M ^a   Mathias, J ^a   Millon, E ^a  

^a UNIVERSITÉ D'ORLÉANS   (France)

^b UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; BULK SINGLE CRYSTALS; MACRO POROUS SILICON; MACROPOROUS; MESOPOROUS; MESOPOROUS SILICON; METALLIC THIN FILMS; SILICON SAMPLES; SINGLE CRYSTAL SILICON; THERMAL CONDUCTIVITY MEASUREMENTS; TITANIUM THIN FILMS; VOLUMETRIC HEAT CAPACITY;

MATHEMATICAL MODELS; MESOPOROUS MATERIALS; MONOCRYSTALLINE SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTALS; SINTERING; SUBSTRATES; THERMAL CONDUCTIVITY; THERMODYNAMIC PROPERTIES; THIN FILMS; TITANIUM;

POROUS SILICON;

EID: 80051948124     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/35/355401     Document Type: Article

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