Titanium nitride: A new Ohmic contact material for n-type CdS

Journal of Applied Physics

Volumn 110, Issue 3, 2011, Pages

  Didden, Arjen ^a   Battjes, Hemme ^a   MacHunze, Raymond ^a   Dam, Bernard ^a   Van De Krol, Roel ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CDS FILMS; CHEMICAL-BATH DEPOSITION; CONTACT MATERIAL; CONTACT RESISTIVITIES; DEVICE APPLICATION; DONOR DENSITY; HEXAGONAL CRYSTAL STRUCTURE; IDEALITY FACTORS; POLYCRYSTALLINE; POTENTIAL BARRIERS; REPLACEMENT MATERIALS; RESISTIVE LOSS; SCHOTTKY DIODES; THICKNESS OF THE FILM;

CADMIUM SULFIDE; CRYSTAL STRUCTURE; ELECTRIC CONTACTORS; INDIUM; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; TITANIUM; TITANIUM NITRIDE;

CADMIUM COMPOUNDS;

EID: 80051924143     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3615946     Document Type: Article

References (43)

1. W. M. Haynes, ed., CRC Handbook of Chemistry and Physics, 91st Edition (Internet Version 2011), CRC Press/Taylor and Francis, Boca Raton, FL.
2. I. Repins, M. A. Contreras, B. Egaas, C. DeHart, J. Scharf, C. L. Perkins, B. To, and R. Noufi, Progress in Photovoltaics 16 (3), 235 (2008). 10.1002/pip.822
3. D. Cunningham, K. Davies, L. Grammond, E. Mopas, N. O'Connor, M. Rubcich, M. Sadeghi, D. Skinner, T. Trumbly, Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference, 2000, 13 (2000).
4. N. Golovan and V. Smyntyna, Sensors and Actuators B-Chemical 6 (1-3), 289 (1992). 10.1016/0925-4005(92)80072-6
5. B. K. Miremadi, K. Colbow, and Y. Harima, Review of Scientific Instruments 68, 3898 (1997). 10.1063/1.1148044
6. X. F. Duan, C. M. Niu, V. Sahi, J. Chen, J. W. Parce, S. Empedocles, and J. L. Goldman, Nature 425 (6955), 274 (2003). 10.1038/nature01996 (Pubitemid 37158399)
7. F. Y. Gan and I. Shih, IEEE Transactions on Electron Devices 49 (1), 15 (2002). 10.1109/16.974742 (Pubitemid 34504274)
8. T. Ota, K. Takahash, and K. Kobayash, Solid-State Electronics 15 (12), 1387 (1972). 10.1016/0038-1101(72)90134-7
9. J. W. Elam, M. Schuisky, J. D. Ferguson, and S. M. George, Thin Solid Films 436 (2), 145 (2003). 10.1016/S0040-6090(03)00533-9
10. E. Talgorn, R. D. Abellon, P. J. Kooyman, J. Piris, T. J. Savenije, A. Goossens, A. J. Houtepen, and L. D. A Siebbeles, Acs Nano 4 (3), 1723 (2010). 10.1021/nn901709a
11. B. P. Luther, S. E. Mohney, and T. N. Jackson, Semiconductor Science and Technology 13 (11), 1322 (1998). 10.1088/0268-1242/13/11/017
12. F. Fillot, T. Morel, S. Minoret, I. Matko, S. Maitrejean, B. Guillaumot, B. Chenevier, and T. Billon, Microelectronic Engineering 82 (3-4), 248 (2005). 10.1016/j.mee.2005.07.083 (Pubitemid 41690452)
13. J. Fritsche, D. Kraft, A. Thissen, T. Mayer, A. Klein, and W. Jaegermann, Thin Solid Films 403, 252 (2002). 10.1016/S0040-6090(01)01528-0 (Pubitemid 34100354)
14. R. K. Swank, Phys. Rev. 153 (3), 844 (1967). 10.1103/PhysRev.153.844
15. S. Gupta, D. Patidar, N. S. Saxena, and K. Sharma, Chalcogenide Letters 6 (12), 723 (2009).
16. A. A. M. Farag, I. S. Yahia, and M. Fadel, International Journal of Hydrogen Energy 34 (11), 4906 (2009). 10.1016/j.ijhydene.2009.03.034
17. S. Gupta, D. Patidar, N. S. Saxena, K. Sharma, and T. P. Sharma, Optoelectronics and Advanced Materials-Rapid Communications 2 (4), 205 (2008).
18. H. Khallaf, I. O. Oladeji, G. Y. Chai, and L. Chow, Thin Solid Films 516 (21), 7306 (2008). 10.1016/j.tsf.2008.01.004
19. I. O. Oladeji, L. Chow, J. R. Liu, W. K. Chu, A. N. P. Bustamante, C. Fredricksen, and A. F. Schulte, Thin Solid Films 359 (2), 154 (2000). 10.1016/S0040-6090(99)00747-6 (Pubitemid 30530945)
20. I. O. Oladeji and L. Chow, J. Electrochem. Soc. 144 (7), 2342 (1997). 10.1149/1.1837815
21. K. S. Ramaiah, R. D. Pilkington, A. E. Hill, R. D. Tomlinson, and A. K. Bhatnagar, Mat. Chem. Phys. 68 (1-3), 22 (2001). 10.1016/S0254-0584(00)00281-9 (Pubitemid 32077225)
22. M. D. Archbold, D. P. Halliday, K. Durose, T. P. A. Hase, D. Smyth-Boyle, and K. Govender, Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference 2005, 476 (2005).
23. N. B. Chaure, S. Bordas, A. P. Samantilleke, S. N. Chaure, J. Haigh, and I. M. Dharmadasa, Thin Solid Films 437 (1-2), 10 (2003). 10.1016/S0040-6090(03) 00671-0
24. R. Ortegaborges and D. Lincot, J. Electrochem. Soc. 140 (12), 3464 (1993). 10.1149/1.2221111
25. S. Mahieu, P. Ghekiere, D. Depla, and R. De Gryse, Thin Solid Films 515, 1229 (2006). 10.1016/j.tsf.2006.06.027 (Pubitemid 44724910)
26. W. G. Spitzer and C. A. Mead, J. Appl. Phys. 34 (10), 3061 (1963). 10.1063/1.1729121
27. S. Gautier, P. Komninou, P. Patsalas, T. Kehagias, S. Logothetidis, C. A. Dimitriadis, and G. Nouet, Semiconductor Science and Technology 18 (6), 594 (2003). 10.1088/0268-1242/18/6/334
28. J. Hu, M. Ameen, G. Leusink, D. Webb, and J. T. Hillman, Thin Solid Films 308, 589 (1997). 10.1016/S0040-6090(97)00477-X
29. A. Paranjpe and M. Islamraja, J. Vac. Sci. Tech. B 13 (5), 2105 (1995). 10.1116/1.588084
30. D. K. Schrder, Semiconductor Material and Device Characterization, 2 ed. (John Wiley Sons Inc., New York, 1998), p. 149-150.
31. D. W. Niles, G. Herdt, and M. Al Jassim, J. Appl. Phys. 81 (4), 1978 (1997). 10.1063/1.364054
32. D. Lincot and R. O. Borges, J. Electrochem. Soc. 139 (7), 1880 (1992). 10.1149/1.2069515
33. C. H. Hsu and F. Mansfeld, Corrosion 57 (9), 747 (2001). 10.5006/1.3280607
34. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2 ed. (Oxford University Press, Oxford, 1988), pp. 38.
35. M. E. Ozsan, D. R. Johnson, M. Sadeghi, D. Sivapathasundaram, G. Goodlet, M. J. Furlong, L. M. Peter, and A. A. Shingleton, J. Mater. Sci.-Mater. Electr. 7 (2), 119 (1996).
36. H. Chavez, M. Jordan, J. C. McClure, G. Lush, and V. P. Singh, J. Mater. Sci.-Mater. Electron. 8 (3), 151 (1997). 10.1023/A:1018537928315
37. S. M. Sze, Physics of Semiconductor Devices, 2 ed. (John Wiley Sons, New York, 1981).
38. S. K. Mandal, A. B. Maity, J. Dutta, R. Pal, S. Chaudhuri, and A. K. Pal, Physica Status Solidi A-Applied Research 163 (2), 433 (1997). 10.1002/1521-396X(199710)163:2<>1.0.CO;2-U
39. B. K. Patel, K. K. Nanda, and S. N. Sahu, J. Appl. Phys. 85 (7), 3666 (1999). 10.1063/1.369731
40. R. H. Lammoreaux, D. L. Hildebrand, and L. Brewer, J. Phys. Chem. Ref. Data 16 (3), 419 (1987). 10.1063/1.555799
41. P. E. Lippens and M. Lannoo, Phys. Rev. B 39 (15), 10935 (15-5- 1989). 10.1103/PhysRevB.39.10935
42. H. P. Maruska, F. Namavar, and N. M. Kalkhoran, Appl. Phys. Lett. 61 (11), 1338 (1992). 10.1063/1.108467
43. S. K. Mandal, A. B. Maity, J. Dutta, R. Pal, S. Chaudhuri, and A. K. Pal, Physica Status Solidi A-Applied Research 163 (2), 433 (1997). 10.1002/1521-396X(199710)163:2<>1.0.CO;2-U