Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing

Organic Electronics

Volumn 12, Issue 11, 2011, Pages 1815-1821

  Nguyen, T N T ^a   Seol, Y G ^a   Lee, N E ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Extended gate; Indium tin oxide (ITO); Organic field effect transistor (OFET); pH sensor

Indexed keywords

ELECTROCHEMICAL ELECTRODES; INDIUM COMPOUNDS; IONS; PH EFFECTS; PH SENSORS; REFRACTORY METAL COMPOUNDS; THRESHOLD VOLTAGE; TIN OXIDES;

BUFFER SOLUTIONS; ELECTROCHEMICAL POTENTIAL; EXTENDED GATE; GATE ELECTRODES; HIGH SENSITIVITY; INDIUM TIN OXIDE; INTERFERING EFFECT; ITO ELECTRODES;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 80051914336     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.07.009     Document Type: Article

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